Title :
High-mobility Ge nano-stripes for next generation Si-CMOS
Author_Institution :
Div. of Nanoelectron., Kyushu Univ., Fukuoka, Japan
Abstract :
Research and development for new semiconductor devices which enable ultrahigh speed operation and ultralow power dissipation are strongly required to overcome the scaling limit of the transistor performance. In line with this, Si-based heterostructure technologies have been widely developed. Recently, we have developed SiGe mixing triggered liquid-phase epitaxy (LPE). This achieves high-mobility Ge single crystals on insulating substrates [1]. The present paper reviews our recent progress in this novel growth technique.
Keywords :
carrier mobility; elemental semiconductors; germanium; liquid phase epitaxial growth; nanofabrication; nanostructured materials; semiconductor growth; Ge; growth technique; heterostructure; high-mobility nanostripes; high-mobility single crystals; insulating substrates; liquid-phase epitaxy; semiconductor devices; transistor; ultrahigh speed operation; ultralow power dissipation;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701082
