Title :
Intrafield effects and device manufacturability: a statistical simulation approach
Author :
Krivokapic, Zoran ; Minvielle, Anna ; Heavlin, William D.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
For sub-250 nm technologies, one of the major systematic sources of variation is the intrafield variation induced by the stepper lens imperfections on critical layers. Using well-calibrated process, device, and statistical simulators, we predict the effects of lens aberrations on the manufacturing distributions of gate critical dimensions, drive currents, and ring oscillators. For a case involving four dies per reticle field, we predict significantly different distributions per reticle field
Keywords :
aberrations; circuit simulation; electric current; integrated circuit modelling; integrated circuit yield; lenses; oscillators; photolithography; reticles; semiconductor process modelling; statistical analysis; 250 nm; calibrated device simulators; calibrated process simulators; calibrated statistical simulators; critical layers; device manufacturability; drive currents; gate critical dimensions; intrafield effects; intrafield variation; lens aberrations; manufacturing distributions; reticle field; reticle field distributions; ring oscillators; statistical simulation; stepper lens imperfections; systematic variation sources; Circuit simulation; Delay; Drives; Lenses; Manufacturing processes; Predictive models; Resists; Ring oscillators; Temperature; Virtual manufacturing;
Conference_Titel :
Statistical Metrology, 1998. 3rd International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-4338-7
DOI :
10.1109/IWSTM.1998.729764
