• DocumentCode
    2334678
  • Title

    Nanotechnology for solid-state lighting

  • Author

    Jin, Chua Soo

  • Author_Institution
    Nat. Univ. of Singapore, Singapore, Singapore
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanotechnology for solid-state lighting is being reported. The use of nanostructures for development of high brightness and white light LEDs for illumination application is presented. InGaN is the compound semiconductor used for the fabrication of high brightness LEDs. The zinc oxide nanorods are grown directly onto the LED surface by an inexpensive solution method. As much as 60% more light is extracted from the LED.
  • Keywords
    II-VI semiconductors; III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; lighting; nanofabrication; semiconductor growth; wide band gap semiconductors; zinc compounds; InGaN; ZnO; brightness; illumination; nanotechnology; solid-state lighting; solution based growth method; white light LED; zinc oxide nanorods;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5701097
  • Filename
    5701097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2334678