DocumentCode :
2334939
Title :
Runs rules for bivariate Shewhart chart
Author :
Chen, Argon ; Guo, Ruey-Shan ; Lee, Chun-Lin
Author_Institution :
Nat. Taiwan Univ., Taipei, Taiwan
fYear :
1998
fDate :
35953
Firstpage :
113
Lastpage :
117
Abstract :
Among the various statistical process control (SPC) charts, the Shewhart chart (Shewhart, Economic Control of Quality Improvement, Van Nostrand Reinhold, 1931) has been the most used control chart in practice due to its simplicity and explicit representation. In many practical situations, there are two or more related quality characteristics that must be monitored simultaneously. The Shewhart chart used at present is inefficient for monitoring multiple variables and lacks the capability to consider the relationships between variables. In this paper, we develop runs rules for the Shewhart chart to control bivariate data. The results show that the Shewhart chart with runs rules is comparable, and in some cases superior, to the T2 control chart. We use the thickness data of an SiO2 layer as an example to illustrate the methodology
Keywords :
dielectric thin films; integrated circuit measurement; multivariable control systems; process monitoring; quality control; statistical process control; SPC charts; Shewhart chart; SiO2; SiO2 layer thickness data; T2 control chart; bivariate Shewhart chart; bivariate data control; control chart; multiple variables monitoring; quality characteristics; runs rules; semiconductor metrology; simultaneous quality characteristics monitoring; statistical process control charts; Argon; Control charts; Equations; Industrial control; Industrial engineering; Monitoring; Process control; Robust control; Scattering; Size control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Statistical Metrology, 1998. 3rd International Workshop on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-4338-7
Type :
conf
DOI :
10.1109/IWSTM.1998.729787
Filename :
729787
Link To Document :
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