DocumentCode :
2335333
Title :
Space charge analysis of plasma pre-processed PTFE thin films
Author :
Takashima, Kazunori ; Oda, Tetsuji
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ., Japan
Volume :
3
fYear :
1998
fDate :
12-15 Oct. 1998
Firstpage :
1784
Abstract :
Space and surface charge behavior of corona-charged PTFE thin films were studied experimentally by space charge density distribution measurement and thermally stimulated discharge current (TSDC) measurement. The effect of the antistatic process using low pressure discharge plasma and a charge elimination process dipping in city water was examined. Surface composition of the samples which were plasma processed was analysed with X-ray photoelectron spectroscopy (XPS) to study the mechanisms of antistatic process. It was found that charge elimination performance was enhanced when samples were plasma-processed independently of the kind of ambient gas during the processing. Oxygen and nitrogen atoms were observed from the XPS measurement of plasma processed samples. In particular a large amount of nitrogen atoms were found on the surface of the samples plasma-processed in nitrogen gas. The samples processed in nitrogen gas showed a large hetero TSDC peak at room temperature before charge elimination process. This may be due to amino groups on the sample surface that were generated during plasma processing.
Keywords :
X-ray photoelectron spectra; corona; electric breakdown; electric current measurement; insulating thin films; insulation testing; plasma materials processing; polymers; space charge; surface charging; thermally stimulated currents; X-ray photoelectron spectroscopy; XPS measurement; antistatic process; charge elimination process; corona-charged PTFE thin films; low pressure discharge plasma; plasma pre-processed PTFE thin films; polymer dielectrics; space charge analysis; space charge density distribution measurement; surface charge behavior; thermally stimulated discharge current measurement; Atomic measurements; Nitrogen; Plasma density; Plasma materials processing; Plasma measurements; Plasma temperature; Plasma x-ray sources; Space charge; Surface discharges; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-4943-1
Type :
conf
DOI :
10.1109/IAS.1998.729814
Filename :
729814
Link To Document :
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