Title :
Removal of NF3 from semiconductor process flue gases by tandem packed bed plasma-adsorbent hybrid systems
Author :
Chang, J.S. ; Kostov, K.G. ; Urashima, K. ; Yamamoto, T. ; Okayasu, Y. ; Kato, T. ; Iwaizumi, T. ; Yoshimura, K.
Author_Institution :
Dept. of Eng. Phys., McMaster Univ., Hamilton, Ont., Canada
Abstract :
This study focuses on NF/sub 3/ removal by a tandem hybrid system comprised by a BaTiO/sub 3/ packed-bed plasma reactor and adsorbent filter. Detailed plasma chemical kinetics in O/sub 2/-H/sub 2/-N/sub 2/-NF/sub 3/ gas mixture and by-product analysis are presented. The laboratory-scale atmospheric pressure packed-bed plasma reactor/adsorbent filter hybrid system for NF/sub 3/ removal is successfully demonstrated. A 100% removal efficiency is achieved by the hybrid system for 5000 ppm NF/sub 3/ and residence time less than 10 sec.
Keywords :
air pollution control; barium compounds; electronics industry; nitrogen compounds; plasma devices; reaction kinetics; titanium compounds; 100 percent; BaTiO/sub 3/; BaTiO/sub 3/ packed-bed plasma reactor; NF/sub 3/; NF/sub 3/ removal; O/sub 2/-H/sub 2/-N/sub 2/-NF/sub 3/; O/sub 2/-H/sub 2/-N/sub 2/-NF/sub 3/ gas mixture; adsorbent filter; atmospheric pressure; by-product analysis; plasma chemical kinetics; semiconductor process flue gases; tandem packed bed plasma-adsorbent hybrid systems; Atmospheric-pressure plasmas; Chemical technology; Electrons; Flue gases; Ionization; Nitrogen; Noise measurement; Plasma applications; Plasma chemistry; Power engineering and energy;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.729834
