Switching dynamics of power bipolar transistor in high-frequency electronic ballast

This paper presents a detailed performance evaluation of power bipolar junction transistor (BJT), in a high frequency electronic ballast. The finite element device structure is used in the mixed circuit and device simulator to predict the internal charge dynamics occurring within the switch, when subjected to stress in an actual ballast circuit. The circuit simulator is used to analyze the circuit and device interaction. The experimental results are compared with the simulation results which helps in analyzing the power loss mechanism in the device and to illustrate the importance of specific device physical characteristics in ballast circuit optimization. This paper also presents a comprehensive analysis of the tradeoffs in device and circuit parameters that are crucial for developing next generation low-power high frequency rugged electronic ballast.