DocumentCode
2337510
Title
An approach for selecting switching devices for CFL ballasts
Author
Laskai, Laszlo ; Ilic, Milan
Author_Institution
Corp. Res. & Dev., Gen. Electr. Co., Schenectady, NY, USA
Volume
3
fYear
1998
fDate
12-15 Oct. 1998
Firstpage
2137
Abstract
This paper discusses a method for switching device selection for lowest overall CFL (compact fluorescent lamp) ballast cost while satisfying product life requirements. The inputs to selection process are lamp power, expected product life, and a range of semiconductor devices that satisfy electrical requirements of conventional, half-bridge series resonant ballast topology. The selection process is illustrated on the example of n-channel MOSFET pair, complementary pair of an n and p-channel MOSFETs, BJT pair, and a pair of IGBTs. While this paper addresses switching device selection for CFL applications, the approach is more universal and it can be implemented to guide switching device selection in order to minimize cost for other electronic equipment as well.
Keywords
bridge circuits; field effect transistor switches; fluorescent lamps; insulated gate bipolar transistors; invertors; lamp accessories; power MOSFET; power bipolar transistors; power semiconductor switches; switching circuits; BJT pair; CFL ballasts; IGBT pair; compact fluorescent lamp; complementary pair n/p-channel MOSFETs; electrical requirements; expected product life; half-bridge series resonant ballast topology; inverters; lamp power; n-channel MOSFET pair; semiconductor devices; switching devices selection; Costs; Electronic ballasts; Electronic equipment; Fluorescent lamps; Insulated gate bipolar transistors; MOSFET circuits; Power semiconductor switches; Resonance; Semiconductor devices; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location
St. Louis, MO, USA
ISSN
0197-2618
Print_ISBN
0-7803-4943-1
Type
conf
DOI
10.1109/IAS.1998.729995
Filename
729995
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