Title :
Efficiency of SiC JFET-Based Inverters
Author :
Zhang, Hui ; Tolbert, Leon M.
Author_Institution :
Min Kao Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
The state-of-the-art SiC JFETs are characterized. Three-phase full-bridge inverter power loss models based on experimental data are established and used to estimate inverter efficiency. The impact of load power, temperature, and switching frequency on inverter efficiency is analyzed and demonstrated. The efficiency of the SiC JFET inverters based on present device quality is above 98% with full load current, and more efficient than most conventional Si inverters, especially at high temperature and high frequency.
Keywords :
invertors; junction gate field effect transistors; silicon compounds; JFET-based inverters; SiC; three-phase full-bridge inverter power loss models; Frequency estimation; Intrusion detection; Inverters; JFETs; Manufacturing; Schottky diodes; Silicon carbide; Switching frequency; Temperature distribution; Testing; JFET; Silicon Carbide; efficiency; inverter; power loss;
Conference_Titel :
Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-2799-4
Electronic_ISBN :
978-1-4244-2800-7
DOI :
10.1109/ICIEA.2009.5138563
