Current status and future prospects of 4H-SiC power RF bipolar junction transistors

This paper reviews the current status of 4H-SiC RF NPN bipolar junction transistors (BJT´s). Process developments including precise and uniform SiC etch and low resistance p-type ohmic contact formation on a two inch SiC wafer will be presented. The high temperature operation up to 500degC and radiation hardness up to 1.6 Mrad, as well as RF performance promising for long-pulse UHF and L-band radar applications will be reported. Rationale and approaches to the further improvement to S-band will be discussed.