Title :
Instantaneous S parameters measurements of MESFETs under burst bias conditions
Author :
Bégin, M. ; Ghannouchi, F.M. ; Selmi, L. ; Riccò, B.
Author_Institution :
Microwave Res. Lab., Ecole Polytech., Montreal, Que., Canada
Abstract :
An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave measurement; network analysers; solid-state microwave devices; GaAs; GaAs MESFET; MESFET; RF; burst bias conditions; electrical model; electrical model elements; instantaneous S parameters measurements; microwave active devices; pulsed bias; self-heating effects; six-port network analyzer; trapping; Conducting materials; Electromagnetic heating; Envelope detectors; Gallium arsenide; Integrated circuit technology; MESFETs; Microwave devices; Radio frequency; Scattering parameters; Voltage;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location :
Hamamatsu
Print_ISBN :
0-7803-1880-3
DOI :
10.1109/IMTC.1994.351974
