Instantaneous S parameters measurements of MESFETs under burst bias conditions

Author

Bégin, M. ; Ghannouchi, F.M. ; Selmi, L. ; Riccò, B.

Author_Institution

Microwave Res. Lab., Ecole Polytech., Montreal, Que., Canada

fYear

1994

fDate

10-12 May 1994

Firstpage

858

Abstract

An innovative six-port network analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; microwave measurement; network analysers; solid-state microwave devices; GaAs; GaAs MESFET; MESFET; RF; burst bias conditions; electrical model; electrical model elements; instantaneous S parameters measurements; microwave active devices; pulsed bias; self-heating effects; six-port network analyzer; trapping; Conducting materials; Electromagnetic heating; Envelope detectors; Gallium arsenide; Integrated circuit technology; MESFETs; Microwave devices; Radio frequency; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE

Conference_Location

Hamamatsu

Print_ISBN

0-7803-1880-3

Type

conf

DOI

10.1109/IMTC.1994.351974

Filename

351974