DocumentCode
2339503
Title
ESD protection for mixed-signal circuits — design or test problem?
Author
Lubana, S.S. ; Sarbishaei, Hossein ; Sachdev, Manoj
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON
fYear
2008
fDate
18-20 June 2008
Firstpage
1
Lastpage
6
Abstract
In spite of significant progress during last couple of decades, ESD still affects production yields, manufacturing costs, product quality, reliability and profitability. The objective of an ESD protection circuit is to create a harmless shunting path for the static electricity before it damages the sensitive electronic circuits. As the devices are continuously scaling down, while ESD energy remains the same, VLSIs become more vulnerable to ESD stress. This higher susceptibility to ESD damage is due to thinner gate oxides and shallower junctions. Furthermore, higher operating frequency of the scaled technologies enforces lower parasitic capacitance of the ESD protection circuits. As a result, increasing the robustness of the ESD protection circuits with minimum additional parasitic capacitance is the main challenge in state of the art CMOS processes. In this paper a general methodology to design ESD protection circuits and devices is discussed. This method is used to tackle some of the main challenges facing ESD designers in modern technologies.
Keywords
CMOS integrated circuits; VLSI; electrostatic discharge; integrated circuit design; mixed analogue-digital integrated circuits; protection; CMOS processes; ESD; VLSI; electrostatic discharge; mixed-signal circuits; parasitic capacitance; protection circuits; CMOS technology; Circuit testing; Costs; Coupling circuits; Electrostatic discharge; Manufacturing; Parasitic capacitance; Production; Profitability; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed-Signals, Sensors, and Systems Test Workshop, 2008. IMS3TW 2008. IEEE 14th International
Conference_Location
Vancouver, BC
Print_ISBN
978-1-4244-2395-8
Electronic_ISBN
978-1-4244-2396-5
Type
conf
DOI
10.1109/IMS3TW.2008.4581613
Filename
4581613
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