Small Signal Nonquasi-static Model for Common Double-Gate MOSFETs Adapted to Gate Oxide Thickness Asymmetry

Author

Sharan, Neha ; Mahapatra, Santanu

Author_Institution

Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India

fYear

2014

fDate

5-9 Jan. 2014

Firstpage

405

Lastpage

410

Abstract

We present a physics-based closed form small signal Nonquasi-static (NQS) model for a long channel Common Double Gate MOSFET (CDG) by taking into account the asymmetry that may prevail between the gate oxide thickness. We use the unique quasi-linear relationship between the surface potentials along the channel to solve the governing continuity equation (CE) in order to develop the analytical expressions for the Y parameters. The Bessel function based solution of the CE is simplified in form of polynomials so that it could be easily implemented in any circuit simulator. The model shows good agreement with the TCAD simulation at-least till 4 times of the cut-off frequency for different device geometries and bias conditions.

Keywords

Bessel functions; MOSFET; polynomials; semiconductor device models; surface potential; Bessel function; Y parameters; circuit simulator; common double-gate MOSFET; continuity equation; gate oxide thickness asymmetry; polynomials; small signal nonquasistatic model; surface potentials; Adaptation models; Integrated circuit modeling; Logic gates; MOSFET; Mathematical model; Predictive models; Semiconductor device modeling; Double-Gate MOSFET; Non Quasi-Static Analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Conference on

Conference_Location

Mumbai

ISSN

1063-9667

Type

conf

DOI

10.1109/VLSID.2014.76

Filename

6733165