Analytical Modeling of Sub-onset Current of Tunnel Field Effect Transistor

In this paper, a compact analytical model for sub onset current, the current before the onset of Band-to-Band tunneling, is presented for tunnel field-effect transistor. Shockley-Reed-Hall (SRH) generation and recombination is used to explain the sub-onset current at the two reverse biased source/channel and channel/drain junctions. 2-D numerical simulations are used to understand the device physics and importance of SRH generation in the drain current. The same model can be used to understand the I-V characteristics of p-type TFET. The dependency of drain current on key parameters i.e. effective tunneling mass (m*) and recombination lifetime (τ) is presented.