A 20-GHz 130-nm CMOS front-end using baluns on glass carrier

Author

Törmänen, Markus ; Sjöland, Henrik

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund

fYear

2008

fDate

7-9 Nov. 2008

Firstpage

1

Lastpage

4

Abstract

A 20-GHz 130-nm CMOS front-end using baluns on glass carrier is presented. The front-end consists of a CMOS die featuring a differential two-stage LNA, a passive double balanced mixer, and output buffers, which is flip-chipped on a glass carrier where baluns are realized for the RF and LO signals. The front-end measures a conversion gain of 11 dB, a noise figure of 7 dB, a 60 dB LO to RF isolation, an ICP_1dB of -16 dBm, an IIP3 of -5.2 dBm, and an IIP2 of +34.5 dBm. The power consumption, excluding output buffers, is 38 mW. Furthermore, the RF input is well protected as it can withstand a simulated 3 kV HBM ESD event.

Keywords

CMOS analogue integrated circuits; baluns; buffer circuits; field effect MMIC; low noise amplifiers; mixers (circuits); CMOS die; CMOS front-end; HBM ESD event; baluns; differential two-stage LNA; frequency 20 GHz; gain 11 dB; glass carrier; noise figure 7 dB; output buffers; passive double balanced mixer; size 130 nm; voltage 3 kV; Discrete event simulation; Energy consumption; Gain measurement; Glass; Impedance matching; Noise figure; Noise measurement; Protection; RF signals; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals, Circuits and Systems, 2008. SCS 2008. 2nd International Conference on

Conference_Location

Monastir

Print_ISBN

978-1-4244-2627-0

Electronic_ISBN

978-1-4244-2628-7

Type

conf

DOI

10.1109/ICSCS.2008.4746888

Filename

4746888