Title :
Thermally-coupled IC interconnect networks
Author_Institution :
Sch. of Eng., Univ. of British Columbia, Kelowna, BC
Abstract :
Analytical, steady-state temperature trajectories on highly coupled interconnects can be found using a symbolic solution method, with little incremental computational cost. This method is used to examine the influence of vias, pitch, linewidth variation, and anisotropic thermal conductance due to porosity variation on the coupled temperature trajectories in a regular, two-layer interconnect grid. Temperature and its sensitivity to process variation in low-k dielectric are seen to be topology dependent, requiring thermal network analysis.
Keywords :
VLSI; integrated circuit interconnections; low-k dielectric thin films; porosity; thermal analysis; thermal conductivity; VLSI interconnect; anisotropic thermal conductance; linewidth variation; low-k dielectric materials; pitch; porosity variation; steady-state temperature trajectories; symbolic solution method; thermal network analysis; thermally-coupled IC interconnect networks; two-layer interconnect grid; vias; Anisotropic magnetoresistance; Dielectric substrates; Dielectric thin films; Integrated circuit interconnections; Resistors; Temperature sensors; Testing; Thermal conductivity; Thermal resistance; Very large scale integration;
Conference_Titel :
Mixed-Signals, Sensors, and Systems Test Workshop, 2008. IMS3TW 2008. IEEE 14th International
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4244-2395-8
Electronic_ISBN :
978-1-4244-2396-5
DOI :
10.1109/IMS3TW.2008.4581631
