A 1 V, Sub-mW CMOS LNA for Low-Power 1 GHz Wide-Band Wireless Applications

This work presents a broad-band Low Noise Amplifier (LNA) for sub-1 GHz ultra-wide-band (UWB) and power constrained applications like the wireless sensor networks (WSN) and the low-power imaging applications. The proposed fully differential LNA achieves low-power, wide-band gain and input impedance matching by adopting the common gate (CG) topology together with the techniques of gain-boosting, shunt-feedback and current re-use. Designed using the standard 180 nm CMOS technology, the LNA achieves 19.5 dB of peak voltage gain with the 3-dB bandwidth exceeding 900 MHz, 3.7 dB of minimum noise figure (NF) and -16.3 dBm of input 3^rd-order intercept point (IIP3). The total power consumed by the LNA core is 480 μW from a 1 V supply. The LNA offers a figure of merit (FOM) of 14 mW^-1.