SIMS characterization of fluorinated SiO2 films

SIMS depth profiling of two type of fluorinated SiO film before and after γ-irradiation have been performed. Analysis of the experimental data based on previous calibration and theoretical studies allow us to reveal correlation between distribution of bounded fluorine and distribution of other native and induced defects in the oxide film. Comparison of SIMS data with the result of computer simulation of γ-irradiation induced processes in SiO₂:F shows that florine may present in SiO₂ both in “interstitial” form and may be included in such structural defects as ≡Si-F...-Si≡, ≡Si-F...O-Si≡, ≡Si-F...H-Si≡. Hypothesis about high mobility of fluorine itself, is not supported by calculations. On the contrary, the high mobility of hydrogen is very important in all studied processes. In particular, γ-irradiation leads to transfer of hydrogen from SiH complexes to SiOH ones