Title :
On capacitance of (Ua=300 V) ionized cluster beam deposited Pb/p-Si(100) Schottky junction
Author :
Cvikl, Bruno ; Korosak, Dean
Author_Institution :
Fac. of Civil Eng., Maribor Univ., Slovenia
Abstract :
The room temperature C-V characteristics, exhibiting the distinct maxima around the reverse biased voltage, Ur, of ionized cluster beam deposited (ICB) metal/p-Si(100), metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, when derived by incorporating the (assumed biased voltage independent) excess interface charge density, σ, in conjunction with the spatially confined deep lying metal impurity levels within the metal enriched semiconductor region, could successfully describe the low frequency C-V data, as measured on these ICB Ua=300 V Schottky junctions
Keywords :
Schottky barriers; capacitance; deep levels; impurity states; interface states; ionised cluster beam deposition; lead; semiconductor-metal boundaries; silicon; 300 V; Pb-Si; Pb/p-Si(100) Schottky junction; Si; capacitance; depletion layer; excess interface charge density; ionized cluster beam deposited; low frequency C-V data; metal/metal-enriched interlayer/p-Si substrate structure; reverse biased voltage; room temperature C-V characteristic; spatially confined deep lying metal impurity levels; surface potential; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Frequency; Ion beams; Semiconductor impurities; Substrates; Temperature; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730181
