Title :
Thermal degradation of Al/AlGaAs Schottky junctions
Author :
Horváth, Zs J. ; Veres, T. ; Van Tuyen, Vo ; Kovács, B. ; Elsawirki, A.I.A. ; Csontos, I. ; Szentpáli, B.
Author_Institution :
Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
The thermal degradation of Al/Al0.20Ga0.80As Schottky junctions was studied up to 750°C, by steps of 50°C for 2 hours in forming gas. Current-voltage and capacitance-voltage measurements indicated, that the strong degradation of the diode parameters began after the annealing steps of 550°C. It was concluded that the degradation was connected with the interaction of the Al metallization with the AlGaAs substrate yielding doping concentration reduction near the interface and increasing the lateral inhomogeneity of the junction
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium; aluminium compounds; annealing; gallium arsenide; interface states; semiconductor device metallisation; 150 to 750 C; Al-Al0.20Ga0.80As; Al-AlGaAs; Al/Al0.20Ga0.80As Schottky junction; Schottky diodes; Schottky-Mott plots; annealing steps; apparent barrier height; capacitance-voltage measurements; current-voltage measurements; diode parameters; ideality factor; interface doping concentration reduction; lateral inhomogeneity; metallization-substrate interaction; probability functions; thermal degradation; Annealing; Artificial intelligence; Circuits; Doping; Engines; Gallium arsenide; Materials science and technology; Metallization; Schottky diodes; Thermal degradation;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730182
