Title :
KRF excimer laser annealing for ultra shallow junction formation: approach for irradiation energy density reduction
Author :
Shibahara, K. ; Kurobe, K. ; Ishikawa, Y. ; Kagawa, K. ; Niwatsukino, Y. ; Matsuno, A.
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Abstract :
KrF excimer laser annealing has been investigated for ultra-shallow low resistive junction formation necessary for MOS device scaling. The junction sheet resistance can be improved by multi-pulse irradiation or introduction of heat assist. By the heat assist method, laser energy density to obtain 500 W/sq. for 20 nm depth junction was reduced about by half.
Keywords :
MIS devices; electric resistance; elemental semiconductors; laser beam annealing; laser beam effects; silicon; 20 nm; KrF excimer laser annealing; MOS device scaling; Si; heat assist method; junction sheet resistance; laser irradiation energy density; multipulse irradiation; ultrashallow low resistive junction; Electrodes; Heating; Ion implantation; MOS devices; Optical pulses; Rapid thermal annealing; Solids; Space vector pulse width modulation; Temperature; Thermal conductivity;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2003. RTP 2003. 11th IEEE International Conference on
Print_ISBN :
0-7803-7874-1
DOI :
10.1109/RTP.2003.1249119
