Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes

Author

Osvald, J.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia

fYear

1998

fDate

5-7 Oct 1998

Firstpage

141

Lastpage

144

Abstract

The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities

Keywords

Poisson equation; Schottky barriers; Schottky diodes; characteristics measurement; semiconductor device measurement; semiconductor device models; C-V characteristic; I-V characteristic; I-V curves; Poisson equation; drift-diffusion equations; inhomogeneous Schottky diodes; lateral correlation; nanosize inhomogeneities; pinch-off effect; single barrier patches; Capacitance; Capacitance-voltage characteristics; Contacts; Electrostatics; Poisson equations; Radiative recombination; Schottky barriers; Schottky diodes; Semiconductor diodes; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730185

Filename

730185