Title :
Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities
Keywords :
Poisson equation; Schottky barriers; Schottky diodes; characteristics measurement; semiconductor device measurement; semiconductor device models; C-V characteristic; I-V characteristic; I-V curves; Poisson equation; drift-diffusion equations; inhomogeneous Schottky diodes; lateral correlation; nanosize inhomogeneities; pinch-off effect; single barrier patches; Capacitance; Capacitance-voltage characteristics; Contacts; Electrostatics; Poisson equations; Radiative recombination; Schottky barriers; Schottky diodes; Semiconductor diodes; Spontaneous emission;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730185
