Using sulfide treatment to improve performance of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures for spectral range, of 1.7-2.5 μm

Author

Andreev, I.A. ; Vova, T. V L ; Mikhailova, M.P. ; Kunitsyna, E.V. ; Soldv´ev, V.A. ; Yakovlev, Yu.P.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1998

fDate

5-7 Oct 1998

Firstpage

155

Lastpage

158

Abstract

We have investigated passivation of GaSb and its quaternary GalnAsSb, and GaAlAsSb alloys in Na₂S and (NH₄) ₂S water solutions. It has been found that these semiconductors are etched in the used sulfide solutions. We have found the etching rates and kinetics of the etching processes. Basing on the obtained results we have determined optimal technological conditions for the passivation of GaSb-substrate before liquid phase epitaxy growing of the quaternary layers. The layers of the grown heterostructures have been shown a small lattice mismatch and have exhibited a good abruptness interface. We have also used the sulfide treatment to passivate the side surface GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures. Reduction of reverse dark current by a factor of 2-10 times was achieved

Keywords

III-V semiconductors; aluminium compounds; dark conductivity; etching; gallium arsenide; gallium compounds; passivation; photodiodes; 1.7 to 2.5 micrometre; GaSb-GaInAsSb-GaAlAsSb; abruptness interface; etching rates; kinetics; lattice mismatch; passivation; photodiode heterostructures; reverse dark current; sulfide treatment; Dark current; Epitaxial growth; Etching; Fiber lasers; Gas lasers; Kinetic theory; Passivation; Photodiodes; Solids; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730187

Filename

730187