Title :
SiO/sub 2/ film formation and electrical properties of InP MIS structures
Author :
Malyshev, S.A. ; Babushkina, N.V.
Author_Institution :
Inst. of Electron., Acad. of Sci., Minsk, Byelorussia
Abstract :
The purpose of this work is to investigate the influence of the SiO2 film deposition conditions on the charge properties of the Me-SiO2-n-lnP (200) MIS structures. SiO2 films have been formed on n-type InP (100) substrates (N=1016-10 17 cm-3 by chemical vapor deposition (CVD) using pyrolysis of tetraethoxysilane (TEOS) in an O2/N2 flow at 300-350°C. The deposition rate was 10-200 nm/h. It is shown that the effective surface state charge Qss and hysteresis of C-V characteristics in the MIS structures to a large extent depends on the SiO2 film deposition rate. In the MIS structures treated in the (NH4)2Sx solution the lowest Q ss (⩽10911) cm-2), Nit(~10-2 cm-2 eV-1) and C-V hysteresis (<0.3 V) were obtained at the dox=70 nm and the 130 nm/h deposition rate
Keywords :
III-V semiconductors; MIS structures; chemical vapour deposition; indium compounds; pyrolysis; silicon compounds; surface states; 300 to 350 degC; 70 nm; C-V characteristics; C-V hysteresis; MIS structures; charge properties; chemical vapor deposition; deposition rate; effective surface state charge; film deposition rate; pyrolysis; Capacitance-voltage characteristics; Chemical vapor deposition; Crystallization; Hysteresis; Indium phosphide; Insulation; MIS devices; Semiconductor films; Substrates; Surface treatment;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle, Slovakia
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730189
