Title :
Numerical investigations of the large signal dynamic admittance of the transferred electron devices
Author :
Suchecka, Malgorzata
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
In the paper results of the full characterization of the Gunn diode´s frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED´s is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED´s in the frequency bands above 40 GHz
Keywords :
Gunn diodes; electric admittance; semiconductor device models; 40 GHz; Gunn diode; X-band; diffusion model; drift model; electron transport; large signal dynamic admittance; numerical simulation; oscillator; transferred electron device; Admittance; Artificial intelligence; Conducting materials; Diodes; Electrons; Frequency; Gunn devices; Numerical simulation; Oscillators; Paper technology;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730196
