DocumentCode
2341224
Title
Numerical investigations of the large signal dynamic admittance of the transferred electron devices
Author
Suchecka, Malgorzata
Author_Institution
Inst. of Electron Technol., Warsaw, Poland
fYear
1998
fDate
5-7 Oct 1998
Firstpage
191
Lastpage
194
Abstract
In the paper results of the full characterization of the Gunn diode´s frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED´s is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED´s in the frequency bands above 40 GHz
Keywords
Gunn diodes; electric admittance; semiconductor device models; 40 GHz; Gunn diode; X-band; diffusion model; drift model; electron transport; large signal dynamic admittance; numerical simulation; oscillator; transferred electron device; Admittance; Artificial intelligence; Conducting materials; Diodes; Electrons; Frequency; Gunn devices; Numerical simulation; Oscillators; Paper technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location
Smolenice Castle
Print_ISBN
0-7803-4909-1
Type
conf
DOI
10.1109/ASDAM.1998.730196
Filename
730196
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