Title :
Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n+ GaAs (M=Pt,W,Cr)
Author :
Ermolovich, I.B. ; Konakova, R.V. ; Milenin, V.V. ; Prokopenko, I.B. ; Gromashevskii, V.L.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n+-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n+-GaAs contact is discussed
Keywords :
III-V semiconductors; Schottky barriers; chromium; defect states; gallium arsenide; photoluminescence; platinum; semiconductor-metal boundaries; tungsten; ultrasonic effects; Cr-GaAs; Pt-GaAs; Schottky barrier diode; W-GaAs; defect states; metal/n-n+-GaAs contact; photoluminescence; ultrasonic treatment; Chemicals; Chromium; Contacts; Gallium arsenide; Metallization; Physics; Pulse measurements; Spectroscopy; Substrates; Surface treatment;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730204
