Title :
Radiation effects in surface-barrier Ir-Al/n-GaAs structures
Author :
Belyaev, A.A. ; Konakova, R.V. ; Milenin, V.V. ; Breza, J. ; Lalinsky, T.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary
Keywords :
III-V semiconductors; Schottky barriers; aluminium alloys; gallium arsenide; gamma-ray effects; iridium alloys; semiconductor-metal boundaries; surface states; C-V measurement; I-V measurement; IrAl-GaAs; Schottky barrier height; electrical properties; gamma irradiation; ideality factor; interfacial layer thickness; mass transfer; parameter extraction; structural defect gettering; surface barrier Ir-Al/n-GaAs structure; surface state density; Gallium arsenide; Gettering; Heat treatment; Metallization; Nonhomogeneous media; Radiation effects; Schottky barriers; Surface resistance; Surface treatment; Thermal stability;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730206
