Title :
Pressure sensors on base of bipolar silicon strain sensitive transistors
Author :
Babichev, G.G. ; Kozlovskii, S.I. ; Romanov, V.A.
Author_Institution :
Inst. of Semicond., Kiev, Ukraine
Abstract :
Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption
Keywords :
bipolar transistors; elemental semiconductors; pressure sensors; silicon; Si; bipolar silicon strain sensitive transistor; pressure sensor; tensotransistor; Aerospace industry; Anisotropic magnetoresistance; Capacitive sensors; Costs; Physics; Process control; Sensor phenomena and characterization; Silicon; Tensile stress; Transducers;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730211
