DocumentCode :
2341656
Title :
New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices
Author :
Vitzcthum, M. ; Streb, Dieter ; Kiesel, Peter ; Kneissl, Michael ; Dohler, Gottfried H.
Author_Institution :
Inst. fur Theor. Phys., Erlangen-Nurnberg Univ., Germany
fYear :
1998
fDate :
5-7 Oct 1998
Firstpage :
279
Lastpage :
282
Abstract :
We report on a new all-optical pump-and-probe technique for the investigation of the fast in-plane ambipolar diffusion process in n-i-p-i doping superlattices. This new technique allows not only the determination of the ambipolar diffusion coefficient but also the spatially resolved investigation of the stationary distribution of the optically induced excess carriers. In our n-i-p-i sample we have measured an ambipolar diffusion coefficient in the range of 104 cm2/s
Keywords :
carrier density; diffusion; high-speed optical techniques; semiconductor superlattices; all-optical pump-and-probe technique; ambipolar in-plane diffusion; carrier concentration; n-i-p-i doping superlattice; Charge carrier processes; Diffusion processes; Electron optics; Laser excitation; Optical pumping; Optical sensors; Optical superlattices; Radiative recombination; Semiconductor device doping; Semiconductor superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
Type :
conf
DOI :
10.1109/ASDAM.1998.730217
Filename :
730217
Link To Document :
بازگشت