Title :
Characteristics of a 1200 V PT IGBT with trench gate and local life time control
Author :
Motto, Eric R. ; Donlon, John F. ; Takahashi, H. ; Tabata, M. ; Iwamoto, H.
Author_Institution :
Powerex Inc., Youngwood, PA, USA
Abstract :
A new 1200 V IGBT with a V/sub CE/(sat) of 1.9 V at 125/spl deg/C and 140 A/cm/sup 2/ has been developed using a trench gate PT (punch-through) structure and local life time control. Compared to state-of-the-art third generation planar devices, this device represents a 30% improvement of on-state losses at almost twice the current density. This paper describes the structure and characteristics of this new IGBT.
Keywords :
current density; insulated gate bipolar transistors; losses; power bipolar transistors; 1.9 V; 100 A; 1200 V; 125 C; current density; device characteristics; local life time control; on-state losses; power IGBT; state-of-the-art; trench gate punch-through structure; Current density; Electrodes; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Power conversion; Power semiconductor devices; Power semiconductor switches; Surface resistance; Virtual colonoscopy;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730239
