DocumentCode :
2341997
Title :
Photovoltaic properties and stability of pentacene-fullerene double heterojunction devices
Author :
Wong, Terence K S ; Xu, Yong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2008
fDate :
24-27 Nov. 2008
Firstpage :
155
Lastpage :
158
Abstract :
The photovoltaic properties of thirty two pentacene (P5) / fullerene (C60) / barthocuproine (BCP) double heterojunction organic photovoltaic devices have been studied as a function of P5 (donor) thickness from 20-76 nm. Both the short circuit current density and power conversion efficiency initially increase with thickness and then decrease for thickness greater than 60 nm. The open circuit voltage and device fill factor showed less variation with P5 thickness. Device characteristics of all devices showed degradation after storage for 20 hours in nitrogen and in darkness. The degradation could not be reversed by thermal annealing in nitrogen and is attributed to exposure to air during initial electrical measurements.
Keywords :
boron compounds; fullerene devices; organic semiconductors; photovoltaic cells; BCP; C60; barthocuproine; device fill factor; open circuit voltage; organic photovoltaic devices; pentacene-fullerene double heterojunction devices; photovoltaic properties; photovoltaic stability; power conversion efficiency; thermal annealing; time 20 hour; Business continuity; Circuit stability; Heterojunctions; Nitrogen; Pentacene; Photovoltaic systems; Power conversion; Short circuit currents; Solar power generation; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sustainable Energy Technologies, 2008. ICSET 2008. IEEE International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-1887-9
Electronic_ISBN :
978-1-4244-1888-6
Type :
conf
DOI :
10.1109/ICSET.2008.4746991
Filename :
4746991
Link To Document :
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