Emissivity of silicon: a mystery to some but not to all!

Author

Lojek, B.

Author_Institution

ATMEL Corp., Colorado Springs, CO, USA

fYear

2002

fDate

2002

Firstpage

21

Lastpage

29

Abstract

The variation of emissivity and absorption between different parts of a production wafer results in nonuniform wafer temperature. The formula for the reflection and emissivity of electromagnetic radiation of a semitransparent semiconductor wafer is presented. It is shown that changes in the absorption coefficient due to different levels of semiconductor doping result in different reflectivity, and consequently, in different emissivity. It is also shown that undoped regions of the wafer must be considered as a semitransparent material where absorption of incident radiation is a volumetric process and the blackbody radiant energy flux within an absorbing medium and reflectivity depends on the complex index of refraction.

Keywords

absorption coefficients; blackbody radiation; doping profiles; elemental semiconductors; emissivity; pyrometers; rapid thermal processing; reflectivity; refractive index; semiconductor process modelling; silicon; temperature distribution; transparency; RTP processing; Si; absorption coefficient; blackbody radiant energy flux; complex refractive index; emissivity; nonuniform wafer temperature; production wafer; pyrometers; reflectivity; semiconductor doping levels variation; semitransparent semiconductor wafer; Attenuation; Electromagnetic radiation; Electromagnetic refraction; Electromagnetic wave absorption; Production; Reflectivity; Semiconductor materials; Silicon; Springs; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of

Print_ISBN

0-7803-7465-7

Type

conf

DOI

10.1109/RTP.2002.1039435

Filename

1039435