Accurate large-signal modeling of SiGe HBTs

Author

Sinnesbichler, F.X. ; Olbrich, G.R.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

749

Abstract

Accurate large-signal modeling is a prerequisite for any effective nonlinear circuit design. We present a novel large signal model for SiGe HBTs that accurately describes the electrical and thermal behavior of the devices from DC to 40 GHz, covering the entire range of bias conditions. It combines the Gummel-Poon model with elements of the VBIC and the HICUM models as well as with specific extensions for SiGe HBTs. The model, which has been implemented into commercial circuit simulation programs, is validated by the excellent agreement of measured and simulated data of millimeter-wave oscillators.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor materials; 0 to 40 GHz; Gummel-Poon model; HICUM model; SiGe; SiGe HBT; VBIC model; circuit simulation; large-signal model; millimeter-wave oscillator; nonlinear circuit design; Circuit simulation; Double heterojunction bipolar transistors; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Parameter extraction; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863290

Filename

863290