Title :
Validation of an analytical large signal model for AlGaN/GaN HEMTs
Author :
Green, B.M. ; Hyungtak Kim ; Chu, K.K. ; Lin, H.S. ; Tilak, V. ; Shealy, J.R. ; Smart, J.A. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
An analytical nonlinear model describing AlGaN/GaN HEMTs grown on sapphire substrates has been extracted based on measured device data. The model accounts for dispersion in transconductance and output conductance present in the devices. Model validations based on comparisons with DC I-V, S-parameter, 4 GHz time-domain waveforms, and 7 GHz power sweep data show good agreement between the model predictions and measurements.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; time-domain analysis; 4 GHz; 7 GHz; AlGaN-GaN; HEMTs; S-parameter; analytical large signal model; dispersion; model predictions; nonlinear model; output conductance; power sweep data; time-domain waveforms; transconductance; Aluminum gallium nitride; Analytical models; Data mining; Gallium nitride; HEMTs; MODFETs; Predictive models; Scattering parameters; Signal analysis; Transconductance;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863293
