Characterization and modeling of nonlinear trapping effects in power SiC MESFETs

Author

Siriex, D. ; Barataud, D. ; Sommet, R. ; Noblanc, O. ; Ouarch, Z. ; Brylinski, Ch. ; Teyssier, J.P. ; Quere, R.

Author_Institution

IRCOM, Limoges Univ., France

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

765

Abstract

Trapping effects in power SiC MESFETs are investigated using a pulsed I-V pulsed S-parameters measurement system. It is shown that the main effect comes from substrate (buffer) traps sensitive to the drain-source voltage. Moreover a nonlinear model of the trapping phenomenon, taking into account the electron capture and emission with different time constants allows one to predict experimentally observed I-V and RF power performances of the devices.

Keywords

S-parameters; UHF field effect transistors; electron traps; microwave field effect transistors; power MESFET; semiconductor device measurement; semiconductor device models; semiconductor materials; silicon compounds; I-V performance; RF power performance; S-parameters measurement system; SiC; drain-source voltage; electron capture; nonlinear model; nonlinear trapping effects; power MESFETs; pulsed I-V pulsed S-parameters; substrate traps; time constants; Electron traps; MESFETs; Power measurement; Power system modeling; Predictive models; Pulse measurements; Radioactive decay; Scattering parameters; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863294

Filename

863294