Title :
Circuit design technique for high efficiency Class F amplifiers
Author :
Grebennikov, A.V.
Author_Institution :
Inst. of Microelectron. (IME), Singapore
Abstract :
In this paper, lead network circuit technique to design high efficiency Class F amplifiers using new types of loading circuits was demonstrated. The loading circuits were realized using both lumped elements and transmission lines. The derived values of each circuit element are given. The simulation procedure and experimental verification were performed on the example of high-voltage LDMOSFET power amplifier. The test measurements show that, for this power amplifier, 76% drain efficiency can be achieved for 20 W output power at 500 MHz operating frequency.
Keywords :
MMIC power amplifiers; MOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; field effect MMIC; integrated circuit reliability; 20 W; 500 MHz; 76 percent; class F amplifiers; drain efficiency; high-voltage LDMOSFET power amplifier; lead network circuit technique; loading circuits; lumped elements; operating frequency; output power; transmission lines; Circuit simulation; Circuit synthesis; Circuit testing; Distributed parameter circuits; Frequency measurement; High power amplifiers; Power amplifiers; Power measurement; Power transmission lines; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863295
