Title :
Analysis of class-F and inverse class-F amplifiers
Author :
Inoue, A. ; Heima, T. ; Ohta, A. ; Hattori, R. ; Mitsui, Y.
Author_Institution :
High Freq. & Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami, Japan
Abstract :
Class-F: the 2nd harmonic is short and the 3rd harmonic is open, inverse class-F: the 3rd one is short and the 2nd one is open, and intermediate harmonic tunings are analyzed by simulations. The best tuning that exhibits the highest efficiency has been found to move from class-F to inverse class-F in accordance with larger gain-compression, higher load resistance and smaller Ron. The Ron dependence of the efficiency is also described by using a waveform theory.
Keywords :
circuit simulation; circuit tuning; power amplifiers; radiofrequency amplifiers; RF power amplifier; class-F amplifier; efficiency; gain compression; harmonic balance simulation; harmonic tuning; inverse class-F amplifier; load resistance; on-resistance; waveform theory; Analytical models; Cellular phones; Harmonic analysis; Impedance; Optical amplifiers; Optical tuning; Power amplifiers; Power generation; Reflection; Semiconductor optical amplifiers;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863296
