DocumentCode
2342383
Title
Analysis of class-F and inverse class-F amplifiers
Author
Inoue, A. ; Heima, T. ; Ohta, A. ; Hattori, R. ; Mitsui, Y.
Author_Institution
High Freq. & Opt. Semicond. Div., Mitsubishi Electr. Corp., Itami, Japan
Volume
2
fYear
2000
fDate
11-16 June 2000
Firstpage
775
Abstract
Class-F: the 2nd harmonic is short and the 3rd harmonic is open, inverse class-F: the 3rd one is short and the 2nd one is open, and intermediate harmonic tunings are analyzed by simulations. The best tuning that exhibits the highest efficiency has been found to move from class-F to inverse class-F in accordance with larger gain-compression, higher load resistance and smaller Ron. The Ron dependence of the efficiency is also described by using a waveform theory.
Keywords
circuit simulation; circuit tuning; power amplifiers; radiofrequency amplifiers; RF power amplifier; class-F amplifier; efficiency; gain compression; harmonic balance simulation; harmonic tuning; inverse class-F amplifier; load resistance; on-resistance; waveform theory; Analytical models; Cellular phones; Harmonic analysis; Impedance; Optical amplifiers; Optical tuning; Power amplifiers; Power generation; Reflection; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.863296
Filename
863296
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