A silicon carbide CMOS intelligent gate driver circuit

Author

Chen, Jian-Song ; Ryu, Sei-Hyung ; Kornegay, Kevin T.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

963

Abstract

The design and fabrication of a high-temperature mixed-signal IC using silicon carbide CMOS technology is presented. The mixed-signal IC implements an intelligent gate driver circuit intended for high-power switching devices. Using a temperature-insensitive comparator, several functions including overvoltage, undervoltage, short-load and open-load detection are provided, all of which are operational up to 300/spl deg/C. These ICs are ideally suited for harsh, high-temperature environments such as automotive and aircraft engines.

Keywords

CMOS integrated circuits; driver circuits; mixed analogue-digital integrated circuits; power integrated circuits; power semiconductor switches; silicon compounds; 300 C; SiC; SiC CMOS intelligent gate driver circuit; design; fabrication; harsh high-temperature environment applications; high-power switching devices; high-temperature mixed-signal IC; open-load detection; overvoltage detection; short-load detection; temperature-insensitive comparator; undervoltage detection; Aircraft propulsion; Aluminum; Boron; CMOS technology; Driver circuits; Intelligent sensors; Protection; Silicon carbide; Temperature sensors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730262

Filename

730262