Title :
A silicon carbide CMOS intelligent gate driver circuit
Author :
Chen, Jian-Song ; Ryu, Sei-Hyung ; Kornegay, Kevin T.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
The design and fabrication of a high-temperature mixed-signal IC using silicon carbide CMOS technology is presented. The mixed-signal IC implements an intelligent gate driver circuit intended for high-power switching devices. Using a temperature-insensitive comparator, several functions including overvoltage, undervoltage, short-load and open-load detection are provided, all of which are operational up to 300/spl deg/C. These ICs are ideally suited for harsh, high-temperature environments such as automotive and aircraft engines.
Keywords :
CMOS integrated circuits; driver circuits; mixed analogue-digital integrated circuits; power integrated circuits; power semiconductor switches; silicon compounds; 300 C; SiC; SiC CMOS intelligent gate driver circuit; design; fabrication; harsh high-temperature environment applications; high-power switching devices; high-temperature mixed-signal IC; open-load detection; overvoltage detection; short-load detection; temperature-insensitive comparator; undervoltage detection; Aircraft propulsion; Aluminum; Boron; CMOS technology; Driver circuits; Intelligent sensors; Protection; Silicon carbide; Temperature sensors; Thermal conductivity;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730262
