Title :
Electro-optic probing technology for ultrahigh-speed IC diagnosis
Author :
Nagatsuma, T. ; Shinagawa, M. ; Yaita, M. ; Takeya, K.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
The switching speed of semiconductor devices and integrated circuits has already outpaced the capability of conventional measuring and testing instruments. This paper reviews recent progress in optical IC-probing technologies based on electro-optic sampling, which have become the laboratory standard. Diagnoses of state-of-the-art GaAs ICs such as HBTs and FETs are also demonstrated
Keywords :
III-V semiconductors; bipolar integrated circuits; electro-optical devices; field effect integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit testing; probes; very high speed integrated circuits; FET; GaAs; GaAs IC; HBT; electro-optic probing; electro-optic sampling; integrated circuits; laboratory standard; on wafer probing; optical IC-probing; semiconductor devices; switching speed; ultrahigh-speed IC diagnosis; Circuit testing; Instruments; Integrated circuit measurements; Integrated circuit technology; Integrated circuit testing; Semiconductor device measurement; Semiconductor device testing; Semiconductor devices; Switching circuits; Velocity measurement;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location :
Hamamatsu
Print_ISBN :
0-7803-1880-3
DOI :
10.1109/IMTC.1994.352176
