• DocumentCode
    2342504
  • Title

    High temperature electronic systems using silicon semiconductors

  • Author

    White, C.S. ; Nelms, R.M. ; Johnson, R.W. ; Grzybowski, R.R.

  • Author_Institution
    Dept. of Electr. Eng., Auburn Univ., AL, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    12-15 Oct. 1998
  • Firstpage
    967
  • Abstract
    Many applications exist for high temperature electronic systems. Silicon semiconductors may be utilized in circuits operating below 200/spl deg/C. Some issues in the design and fabrication of electronic circuits for this temperature range are described in this paper. A hybrid version of a zero-voltage-switching solenoid drive circuit is constructed using standard commercial components and subjected to both short-term and long-term temperature tests. In the short-term test, the circuit was characterized from room temperature to 150/spl deg/C. The circuit operated at 150/spl deg/C for 2784 hours in the long-term test. These tests indicate that standard commercial components exist for operation at 150/spl deg/C. The inductor in the circuit was stable with temperature, while the capacitors varied significantly with temperature during the long-term test.
  • Keywords
    elemental semiconductors; high-temperature electronics; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; switching circuits; 25 to 150 C; 2784 h; Si; ZVS; capacitors; high-temperature electronic systems; long-term temperature tests; short-term temperature tests; silicon semiconductors; solenoid drive circuit; temperature range; zero-voltage-switching; Aerospace electronics; Capacitance; Capacitors; Circuit testing; Inductors; Silicon; Temperature dependence; Temperature distribution; Temperature sensors; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-4943-1
  • Type

    conf

  • DOI
    10.1109/IAS.1998.730263
  • Filename
    730263