DocumentCode
2342532
Title
Emission microscopy in semiconductor failure
Author
Inuzuka, Eiji ; Suzuki, Hiroyoshi
Author_Institution
Hamamatsu Photonics KK, Japan
fYear
1994
fDate
10-12 May 1994
Firstpage
1492
Abstract
Emission microscopy is introduced as a new technique for semiconductor failure analysis. Very faint photo-emission is observed where various abnormal condition is arising. To find exact location of the failure site is a key to improve the design and production yield of the device. Emission microscope and it´s application is described with practical analysis results
Keywords
VLSI; image processing equipment; integrated circuit testing; microchannel plates; optical microscopy; photodetectors; photoemission; photon counting; LSI; VLSI; abnormal condition; emission microscopy; semiconductor failure; semiconductor failure analysis; Cameras; Cathodes; Constitution; Electron emission; Image intensifiers; Large scale integration; Lenses; Optical microscopy; Phosphors; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Instrumentation and Measurement Technology Conference, 1994. IMTC/94. Conference Proceedings. 10th Anniversary. Advanced Technologies in I & M., 1994 IEEE
Conference_Location
Hamamatsu
Print_ISBN
0-7803-1880-3
Type
conf
DOI
10.1109/IMTC.1994.352178
Filename
352178
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