2342568

Conductive borides used for junction formation and integration with contacts in deep 0.1 /spl mu/m MOSFETs

Zagozdzon-Wosik, W. ; Ranjit, R. ; Ravindranath, D.B. ; Zhang, Z. ; Charlson, J. ; Rusakova, I. ; van der Heide, P. ; Larson, L. ; Bennett, J. ; Tichy, R. ; Beebe, M.

University of Houston

2002

25-27 Sept. 2002

137

142

CMOS integrated circuits; CMOS technology; Conductivity; Contact resistance; Degradation; Doping profiles; Fabrication; Germanium silicon alloys; Phase change materials; Silicon germanium;

English

ieee

Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of

Vancouver, BC, Canada

0-7803-7465-7

conf

10.1109/RTP.2002.1039452

1039452