Rapid thermal curing of low-k spin-on films

Author

Sharangpani, Rahul ; Tay, Sing-Pin

Author_Institution

Mattson Technol. Inc., Fremont, CA, USA

fYear

2002

fDate

2002

Firstpage

143

Lastpage

146

Abstract

We have used short time, high temperature, and high ramp-rate thermal cycles for curing organic low-k spin-on films in a rapid thermal processing (RTP) system. We show that such cycles can give lower copper diffusion through barrier layers than the conventional low temperature, long duration cycles carried out in furnaces. In addition, a highly controlled ambient is needed to prevent film oxidation. All of these requirements make RTP ideally suited for low-k film curing. Therefore, RTP can enable integration of low-k films in advanced interconnect schemes.

Keywords

dielectric thin films; diffusion; integrated circuit interconnections; integrated circuit metallisation; permittivity; rapid thermal processing; spin coating; Cu; RTP; barrier layers; controlled ambient; copper diffusion; film oxidation prevention; interconnect schemes; low-k film curing; low-k film integration; low-k spin-on films; organic low-k spin-on films; rapid thermal curing; rapid thermal processing system; short time high temperature high ramp-rate thermal cycles; Coatings; Copper; Curing; Dielectric films; Furnaces; Oxidation; Rapid thermal processing; Solvents; Temperature; Thermal decomposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of

Print_ISBN

0-7803-7465-7

Type

conf

DOI

10.1109/RTP.2002.1039453

Filename

1039453