Title :
Going green for discrete power diode manufacturers
Author :
Tan, Cher Ming ; Sun, Lina ; Wang, Chase
Author_Institution :
Sch. of EEE, Nanyang Technol. Univ., Singapore
Abstract :
Owing to its deep diffusion requirement for discrete power diode of rating above 400 V and 1 A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100degC and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400degC and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.
Keywords :
elemental semiconductors; power semiconductor diodes; semiconductor device manufacture; silicon; Si; diffusion requirement; discrete power diode manufacturers; fabrication duration; temperature 400 degC; time 4 hour; Annealing; Capacitance-voltage characteristics; Diodes; Doping; Energy consumption; Fabrication; Furnaces; Manufacturing industries; Temperature; Wafer bonding; energy consumption; junction interface characterization; power diode; wafer bonding;
Conference_Titel :
Industrial Electronics and Applications, 2009. ICIEA 2009. 4th IEEE Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-2799-4
Electronic_ISBN :
978-1-4244-2800-7
DOI :
10.1109/ICIEA.2009.5138814
