Impact of nitrogen doping on gate oxide integrity on 300 mm silicon wafers after RTP in hydrogen ambient

Author

Huber, Alex ; Passek, F. ; Muller, Tim

fYear

2002

fDate

2002

Firstpage

159

Lastpage

165

Abstract

300 mm silicon wafers with nitrogen content >1.0×10¹⁵ at/cm³ and without nitrogen doping (reference group) were subjected to a rapid thermal annealing process in an atmosphere of 60% hydrogen in argon. The gate oxide integrity (GOI) improvement of the annealed nitrogen-doped wafers was investigated and compared to the reference group. Additionally, the depth dependence of the GOI-improvement by annealing was evaluated. At 200 nm depth the defect density of the RTP-treated wafer was again comparable to the respective reference wafer defect density. The defect morphology change induced by hydrogen RTP was investigated via AFM measurements.

Keywords

atomic force microscopy; crystal defects; elemental semiconductors; rapid thermal annealing; semiconductor doping; silicon; 300 mm; AFM; GOI improvement; H₂ RTP; H₂-Ar; N doping effects; Si; Si:N; defect morphology; gate oxide integrity; rapid thermal annealing process; wafer defect density; Argon; Atmosphere; Doping; Hydrogen; Nitrogen; Rapid thermal annealing; Rapid thermal processing; Silicon; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of

Print_ISBN

0-7803-7465-7

Type

conf

DOI

10.1109/RTP.2002.1039455

Filename

1039455