Title :
Investigation of flat-pack IGBT reliability
Author :
Kirihata, Humiaki ; Takahashi, Yoshikazu ; Wakimoto, Hiroki ; Niino, Fumisato
Author_Institution :
Semicond. Device Res. & Dev. Center, Fuji Electr. Co. Ltd., Nagano, Japan
Abstract :
High power and high reliable IGBTs are used in applications to traction and high voltage converters. We have investigated a flat-pack IGBT, compared with an IGBT module and a GTO, to realize the ruggedness in electrical, thermal and mechanical stresses, and the long term reliability. The thermomechanical behaviors on the Si chip surface are discussed, based on two-dimensional numerical simulation results and power cycling test results.
Keywords :
insulated gate bipolar transistors; packaging; power convertors; semiconductor device reliability; thermal stresses; GTO; IGBT module; Si chip surface; electrical stresses; flat-pack IGBT reliability; high voltage converters; long term reliability; mechanical stresses; power cycling test; thermal stresses; thermomechanical behavior; traction converters; two-dimensional numerical simulation; Artificial intelligence; Contacts; Insulated gate bipolar transistors; Packaging; Production facilities; Research and development; Testing; Thermal stresses; Voltage; Wire;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730270
