Title :
Further improvements in the reliability of IGBT modules
Author :
Schütze, Thomas ; Berg, Hermann ; Hierholzer, Martin
Author_Institution :
eupec GmbH & Co. KG, Warstein, Germany
Abstract :
This paper gives a survey of the measures and the resulting improvements of IGBT module reliability reached by eupec during the introduction of IGBT high power modules. The points of improvement are in the areas of: bonding; base plate; partial discharge; and chip characteristics.
Keywords :
insulated gate bipolar transistors; modules; partial discharges; power bipolar transistors; power field effect transistors; semiconductor device reliability; IGBT high power modules; IGBT module reliability; IGBT modules; base plate; bonding; chip characteristics; eupec; partial discharge; reliability improvement; Bonding; Corrosion; Failure analysis; Insulated gate bipolar transistors; Multichip modules; Temperature; Testing; Thermal conductivity; Voltage; Wire;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730271
