Field emitter array analysis for the design of inductive output amplifiers

Summary form only given, as follows. The ability to modulate the beam density upon emission in ways which allow for high frequency and good spatial localization generates the opportunity for significant improvements in RF device performance. Spatiotemporal modulation at the cathode surface promises to address these concerns. Field emitter arrays (FEAs) are therefore under consideration for the gated beam source in inductive output amplifiers (IOA) now being designed. Electron emission from FEAs may be described to a good approximation by the Spindt form of the Fowler-Nordheim equation, I/sub SFN/=A V/sub g//sup 2/ exp(-B/V/sub g/), where the current is a function of the gate potential V/sub g/. A and B may be determined from a seminumerical algorithm described elsewhere in this conference. In short, B is principally dictated by material parameters (e.g., work function), and A primarily by tip geometry. Device performance of the IOAs, in terms of efficiency, gain, and bandwidth, entails certain demands on the FEA cathode element, characterized by limits on the A and B parameters, as well as the transconductance and capacitance of the unit cell. In this presentation, we show the demands on geometric and material parameters that are required to meet IOA objectives. In this presentation, we shall show, for a range of geometrical and material parameters, the Fowler Nordheim A and B, capacitances, and transconductances they entail.