Title :
A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz
Author :
Simburger, Werner ; Heinz, A. ; Wohlmuth, H.-D. ; Bock, J. ; Aufinger, K. ; Rest, M.
Author_Institution :
Corporate Res., Infineon Technols. AG, Munich, Germany
Abstract :
A monolithic RF power amplifier for 1.8-2 GHz has been realized in a 50 GHz-f/sub T/ Si bipolar technology and is operating down to supply voltages as low as 1.2 V. The balanced 2-stage power amplifier uses two on-chip transformers as input-balun and for interstage matching, with a high coupling coefficient of k=0.84. At 1.2 V, 2.5 V, and 3 V supply voltage an output power of 0.22 W, 1 W and 1.4 W is achieved, at a power added efficiency of 47%, 55% and 55%, respectively at 1.9 GHz. The small-signal gain is 28 dB.
Keywords :
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; bipolar MMIC; differential amplifiers; elemental semiconductors; silicon; 0.22 to 1.4 W; 1.2 to 3 V; 1.8 to 2 GHz; 28 dB; 47 to 55 percent; PAE; Si; balanced two-stage power amplifier; bipolar MMIC power amplifier; coupling coefficient; input-balun; interstage matching; on-chip transformers; output power; small-signal gain; supply voltages; Batteries; Circuits; High power amplifiers; Impedance matching; Low voltage; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon; Transformers;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863314
