A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz

Author

Simburger, Werner ; Heinz, A. ; Wohlmuth, H.-D. ; Bock, J. ; Aufinger, K. ; Rest, M.

Author_Institution

Corporate Res., Infineon Technols. AG, Munich, Germany

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

853

Abstract

A monolithic RF power amplifier for 1.8-2 GHz has been realized in a 50 GHz-f/sub T/ Si bipolar technology and is operating down to supply voltages as low as 1.2 V. The balanced 2-stage power amplifier uses two on-chip transformers as input-balun and for interstage matching, with a high coupling coefficient of k=0.84. At 1.2 V, 2.5 V, and 3 V supply voltage an output power of 0.22 W, 1 W and 1.4 W is achieved, at a power added efficiency of 47%, 55% and 55%, respectively at 1.9 GHz. The small-signal gain is 28 dB.

Keywords

MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; baluns; bipolar MMIC; differential amplifiers; elemental semiconductors; silicon; 0.22 to 1.4 W; 1.2 to 3 V; 1.8 to 2 GHz; 28 dB; 47 to 55 percent; PAE; Si; balanced two-stage power amplifier; bipolar MMIC power amplifier; coupling coefficient; input-balun; interstage matching; on-chip transformers; output power; small-signal gain; supply voltages; Batteries; Circuits; High power amplifiers; Impedance matching; Low voltage; Power amplifiers; Power generation; Radiofrequency amplifiers; Silicon; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863314

Filename

863314