Title :
An integrated 900-MHz push-pull power amplifier for mobile applications
Author :
Matilainen, M.J. ; Nummila, K.L.I. ; Jarvinen, E.A. ; Kalajo, S.J.K.
Author_Institution :
Nokia Res. Center, Helsinki, Finland
Abstract :
This paper describes a two-stage 900-MHz push-pull type GaAs HBT MMIC power amplifier with 3.2W (35dBm) maximum output power and 57% maximum power added efficiency with a supply voltage of 3.5V. The small-signal gain of the PA is 30dB. The size of the realized power amplifier chip is 1.2*1.3mm/sup 2/. The drawbacks and advantages of the push-pull topology are discussed and compared to a traditional single-ended topology.
Keywords :
III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; bipolar MMIC; differential amplifiers; gallium arsenide; heterojunction bipolar transistors; mobile radio; telephone sets; 3.2 W; 3.5 V; 30 dB; 57 percent; 900 MHz; GaAs; GaAs HBT MMIC power amplifier; mobile phone handset; power added efficiency; push-pull topology; small-signal gain; Circuit simulation; Circuit topology; Gallium arsenide; Grounding; Heterojunction bipolar transistors; Impedance; Inductance; Mobile handsets; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.863316
